Low Temperature Silicon Selective Epitaxial Growth(SEG) and Phosphorous Doping in a Reduced-Pressure Pancake Reactor

..................................................................................................................... x CHAPTER 1 : INTRODUCTION .................................................................................... 1 ................................................................................................ 1.1 Purpose of Work 1 ............................................................................................ 1.2 Overview of Thesis 1 CHAPTER 2: BACKGROUND ................................................................................... 3 2.1 Silicon Epitaxy ................................................................................................... 3 ......................................................................... 2.1.1 Fundamentals of Epitaxy 3 2.1.1.1 Kinetics of Growth ..................................................................... 5 ......................................................... 2.1.1.2 Gas Phase Mass Transfer 6 2.1.2 Silicon Source Gases and Chemical Reactions ........................................ 9 ..................................................................................... 2.1.3 Epitaxial Reactors 10 ..................................................................................... 2.1.4 Common Defects 13 2.1.4.1 Stacking Faults ........................................................................... 13 .................................................. 2.1.4.2 Dislocations and Other Defects 16 2.2 Selective Epitaxial Growth and Epitaxial Lateral Overgrowth ............................ 16 .............................................................................................. 2.2.